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| Datasheet File OCR Text: |
| i nchange semiconductor isc product specification isc w ebsite is registered trademark 1 isc silicon n p n power transistor 2 s c 2911 description collector - emitter breakdown voltage - : v ( br ) ceo = 16 0 v( min ) good l inearity of h fe high switching speed complement to type 2sa12 09 applications designed for high - voltage switching and af 100w predriver applications . a bsolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector - b ase v oltage 1 8 0 v v ceo collector - e mitter v oltage 16 0 v v ebo emitter - b ase v oltage 5 v i c collector c urrent - continuous 1 40 m a i c p collector c urrent - pulse 200 ma p c collector p ower d issipat i on @ t c =25 10 w collector p ower d issipat i on @ t a =25 1 t j junction temperature 150 t stg storage temperature range - 55~ 150
i nchange semiconductor isc product specification isc w ebsite is registered trademark 2 isc silicon npn power transistor 2 sc 2911 electrical characterist ics t c =25 v c e( sat ) collector - e mitter s aturation v oltage i c = 50m a; i b = 5m a 0.3 v i c bo collector c utoff c urrent v c b = 8 0 v ; i e = 0 0.1 a i ebo e mitter c utoff c urrent v eb = 4 v ; i c = 0 0.1 a h fe dc c urrent g ain i c = 10m a; v ce = 5 v 100 400 f t current - gain bandwidth product i c = 1 0m a; v ce = 10 v 1 5 0 mhz c ob collector output capacitance i e = 0 ; v c b = 10 v ; f= 1mhz 3 pf ? h fe classifications r s t 100 - 200 140 - 280 200 - 400 |
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